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Wie gebe ich Satzzeichen in den LaTeX-Header ein (Fancyheadings)?

tag-icon • tag-icon header-footer fancyhdr
Wie gebe ich Satzzeichen in den LaTeX-Header ein (Fancyheadings)?

Ich folge dieser Anleitung hierhttp://www.fi.infn.it/pub/tex/doc/orig/fancyheadings.pdf

für die Kopfzeilenformatierungsoptionen „Fancyheadings“ in Latex. Auf Seite 5 finden Sie ein Beispiel, wie Sie die Kopfzeilen auf jeder Seite zu Kapiteln und Kapiteltiteln machen.

Der von ihnen angegebene Code lautet beispielsweise:

\lhead[\fancyplain{}{\slshape \rightmark}]{\fancyplain{}%
{\slshape \leftmark}}

ergäbe:

"Chapter 1 Introduction"in der Kopfzeile der Ausgabeseite, wobei „Kapitel 1“ das Kapitel und „Einführung“ der Kapiteltitel ist, der vom \chapter{Introduction}Anfang meiner Kapitelseite abgeleitet wurde.

Meine Frage ist nun: Wie zum Teufel kann ich erreichen, dass die Überschriften etwa Folgendes ergeben:

"Chapter 1: Introduction"oder "Chapter 1 | Introduction"etwas mit Satzzeichen zwischen dem Kapitel und dem Kapiteltitel.

Bitte lassen Sie mich wissen, ob ich weiteren Code posten soll – ich hoffe, dass jemand einfach schnell die Antwort weiß, aber lassen Sie mich wissen, wenn weitere Informationen benötigt werden.

Antwort1

Unterlagen aus dem Jahr 1996 sollten mit Argwohn betrachtet werden. Tatsächlich fancyheadingsist das Paket seit rund 20 Jahren veraltet.

Sie müssen sich fancyhdrdie Dokumentation ansehen und neu definieren \chaptermark.

\documentclass{book}
\usepackage{blindtext}

\usepackage{fancyhdr}

\pagestyle{fancy}
\fancyhf{} % clear all fields
\fancyhead[LE,RO]{\slshape\rightmark}
\fancyhead[RE,LO]{\slshape\leftmark}
\fancyfoot[C]{\thepage}
\renewcommand{\chaptermark}[1]{%
  \markboth{\MakeUppercase{%
    \ifnum\value{chapter}>0
      Chapter \thechapter\ $|$ % with a space!
    \fi
    #1%
  }}{}%
}

\begin{document}

\blinddocument

\end{document}

Antwort2

Bildbeschreibung hier eingeben

Sie können es wie folgt anpassen:

  • Für den Kapitelnamen verwenden Sie, \renewcommand{\chaptermark}[1]{ \markboth{#1}{} }wobei #1der Kapitelname ist. Sie können beispielsweise #1durch ersetzen \textit{#1}und der Kapitelname wird in den Überschriften kursiv dargestellt. Dasselbe Konzept gilt für den Abschnittsnamen\renewcommand{\sectionmark}[1]{ \markright{#1} }
  • Das Wort Chapterkann mit geändert werden \renewcommand{\chaptername}{Chapter}. Sie können eine abgekürzte Form verwenden wieCh
  • Die Kopfzeilen werden mit angepasst \fancypagestyleund der Seitenstil wird mit definiert \pagestyle{mainmatter}. Um Seitenstile an unerwünschten Stellen (insbesondere am Anfang) zu entfernen, verwenden Sie \thispagestyle{empty}

Hier ist der vollständige Code, der Sie zu den Headern führt Chapter 1: Introduction:

\documentclass[twoside]{thesis}

    \usepackage{fancyhdr}

        \pagestyle{fancy} % allows for more advanced header and footer formats

                % Customizations
                \renewcommand{\chaptermark}[1]{ \markboth{#1}{} }  % customize chapter name here
                \renewcommand{\chaptername}{Chapter}
                \renewcommand{\sectionmark}[1]{ \markright{#1} } % customize section name here

                % Define headers
                \fancypagestyle{mainmatter}{
                                                % Header and footer lines
                                                \renewcommand{\headrulewidth}{0.5 pt}
                                                \renewcommand{\footrulewidth}{0 pt}

                                                % Headers
                                                \fancyhead{} % clear header field
                                                \fancyhead[RO]{ \textbf{ \chaptername\ \thechapter:\ \leftmark } \hspace{4mm} \thepage } % customize chapter name header here
                                                \fancyhead[LE]{ \thepage \hspace{4mm} \thesection \textbf{ \rightmark }  } % customize section name header here

                                                % Foot
                                                \fancyfoot{} % clear foot fields
                                                \fancyfoot[LE, RO]{By: Al-Motasem I. Aldaoudeyeh}
                                        }


\begin{document}

\thispagestyle{empty}

\title{Development of a Generalized PV Model in MATLAB/Simulink Using Datasheet Values}



\author{Al-Motasem I. Aldaoudeyeh
    \thanks{Al-Motasem I. Aldaoudeyeh is with the Department of Electrical and Computer Engineering, North Dakota State University, Fargo, ND, 58102 USA e-mail: [email protected]}
}


\maketitle


\thispagestyle{empty}
\begin{abstract}

    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit. Further, for both maximum power point and open-circuit voltage, the statistical variance around manufacturer measurements due to temperature changes is demonstrated to be low for five various module technologies.

\end{abstract}
\thispagestyle{empty}


\pagestyle{mainmatter}
\chapter{Chapter Name}


\section{Introduction}
\label{section:introduction}

    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit. Further, for both maximum power point and open-circuit voltage, the statistical variance around manufacturer measurements due to temperature changes is demonstrated to be low for five various module technologies.

    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit. Further, for both maximum power point and open-circuit voltage, the statistical variance around manufacturer measurements due to temperature changes is demonstrated to be low for five various module technologies.

    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit. Further, for both maximum power point and open-circuit voltage, the statistical variance around manufacturer measurements due to temperature changes is demonstrated to be low for five various module technologies.

    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit. Further, for both maximum power point and open-circuit voltage, the statistical variance around manufacturer measurements due to temperature changes is demonstrated to be low for five various module technologies.


\section{Numerical Results and Discussion}
\label{sec:results}

    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit. Further, for both maximum power point and open-circuit voltage, the statistical variance around manufacturer measurements due to temperature changes is demonstrated to be low for five various module technologies.

    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit. Further, for both maximum power point and open-circuit voltage, the statistical variance around manufacturer measurements due to temperature changes is demonstrated to be low for five various module technologies.

    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit.


\section{Conclusions}
\label{sec:conclusions}


    This paper proposes an improved single-diode modeling approach for PV modules suitable for a broad range of the PV technologies available today, including modules on tandem cell structures. After establishing the model (which has an overall of seven parameters), the paper devises a methodology to estimate its parameters using Standard Test Conditions (STC) data, Nominal Operating Cell Temperature (NOCT) data, and temperature coefficients values as provided in most manufacturers' datasheets. Simulation results and their comparison with a previous work show a very accurate prediction of critical points in the current-voltage characteristics curve. The precise prediction happens for both STC and NOCT conditions and the error in predicting maximum power point lies within $1\%$ limit, and the error in its corresponding voltage and current is almost always within $2\%$ limit. Further, for both maximum power point and open-circuit voltage, the statistical variance around manufacturer measurements due to temperature changes is demonstrated to be low for five various module technologies.


\end{document}

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